Characterization of the $\mathrm{Si}$:${\mathrm{Se}}^{+}$ Spin-Photon Interface

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Characterization of the $Si$ : ${Se}^{+}$ Spin-Photon Interface

Adam DeAbreu, Camille Bowness, Rohan J.S. Abraham, Alzbeta Medvedova, Kevin J. Morse, Helge Riemann, Nikolay V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael L.W. Thewalt, and Stephanie Simmons

Phys. Rev. Applied 11, 044036 – Published 11 April 2019

Abstract

Silicon is the most-developed electronic and photonic technological platform and hosts some of the highest-performance spin and photonic qubits developed to date. A hybrid quantum technology harnessing an efficient spin-photon interface in silicon would unlock considerable potential by enabling ultralong-lived photonic memories, distributed quantum networks, microwave-to-optical photon converters, and spin-based quantum processors, all linked with integrated silicon photonics. However, the indirect band gap of silicon makes identification of efficient spin-photon interfaces nontrivial. Here we build upon the recent identification of chalcogen donors as a promising spin-photon interface in silicon. We determine that the spin-dependent optical degree of freedom has a transition dipole moment stronger than previously thought [here 1.96(8) D], and the spin $T_{1}$ lifetime in low magnetic fields is longer than previously thought [here longer than $4.6 (1.5)$ h]. We furthermore determine the optical excited-state lifetime [7.7(4) ns], and therefore the natural radiative efficiency [0.80(9)%], and by measuring the phonon sideband determine the zero-phonon emission fraction [16(1)%]. Taken together, these parameters indicate that an integrated quantum optoelectronic platform based on chalcogen-donor qubits in silicon is well within reach of current capabilities.

Received 2 October 2018
Revised 12 December 2018

DOI:https://doi.org/10.1103/PhysRevApplied.11.044036

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Cavity quantum electrodynamics Color centers Integrated optics Optoelectronics Photonics Quantum information architectures & platforms Quantum information with hybrid systems

Doped semiconductors

Quantum Information, Science & TechnologyCondensed Matter, Materials & Applied Physics

Authors & Affiliations

Adam DeAbreu¹, Camille Bowness¹, Rohan J.S. Abraham¹, Alzbeta Medvedova¹, Kevin J. Morse¹, Helge Riemann², Nikolay V. Abrosimov², Peter Becker³, Hans-Joachim Pohl⁴, Michael L.W. Thewalt¹, and Stephanie Simmons^1,*

¹Department of Physics, Simon Fraser University, 8888 University Drive, Burnaby, British Columbia V5A 1S6, Canada
²Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
³Physikalisch-Technische Bundesanstalt (PTB) Braunschweig, Bundesallee 100, 38116 Braunschweig, Germany
⁴VITCON Projectconsult GmbH, Otto-Schott Straße 13, 07745 Jena, Germany

^*s.simmons@sfu.ca

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Vol. 11, Iss. 4 — April 2019

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Figure 1
Energy-level diagram of the $Si$ : ${}^{77}{Se}^{+}$ system. (a) The six $1 s$ : $T_{2}$ levels are split into $1 s$ : $T_{2}$ : $Γ_{7}$ (two states) and $1 s$ : $T_{2}$ : $Γ_{8}$ (four states) by the spin-valley interaction. With nuclear spin interactions, the $1 s$ : $A$ states are split by the hyperfine interaction into electron-nuclear spin singlet, $S$ , and triplet, $T$ ( $T_{-}$ , $T_{0}$ , $T_{+}$ ), states. (b) These eigenstates change according to an applied magnetic field. In the high-field limit, the $1 s$ : $A$ and $1 s$ : $Γ_{7}$ states are labeled according to nuclear spin $(⇑, ⇓)$ and electron spin $(↑, ↓)$ .
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Figure 2
Temperature dependence of ${}^{77}{Se}^{+}$ electron-nuclear spin singlet-triplet $T_{1}$ taken near Earth’s magnetic field (blue), revealing a low-temperature limit of $T_{1} = 4.6 (1.5) h$ , and comparison with published data, collected with less blackbody shielding (green asterisk) (reprinted from Ref. [31] with permission), as well as electron spin $T_{1}$ data taken at 0.35 T (orange line) (reprinted from Ref. [30] with permission). The inset shows the optical pumping and read-out sequence to measure singlet-triplet $T_{1}$ . For a given wait time, $τ$ , the total remaining polarization signal is measured as the difference between two integrated absorption transient areas, both measuring the population of the triplet state (solid line), after two different initialization pulses (dashed lines). First (A) after initialization into the singlet by pumping on the $1 s$ : $A$ : $T \Leftrightarrow 1 s$ : $T_{2}$ : $Γ_{7}$ transition, here labeled $T$ , and second (B) after initialization into the triplet by pumping on the $1 s$ : $A$ : $S_{0} \Leftrightarrow 1 s$ : $T_{2}$ : $Γ_{7}$ transition, here labeled $S_{0}$ .
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Figure 3
The photoluminescence spectrum of the ${Se}^{+} 1 s$ : $T_{2}$ : $Γ_{7} \Rightarrow 1 s$ : $A$ transition taken with a spectral resolution of $1 {cm}^{- 1}$ . The inset shows the normalized spectrum showing the relative height of the ZPL to the phonon sideband. The main panel shows the same spectrum, clipped vertically to display the phonon sideband features. The area of the phonon sideband is 5.6 times larger than the area of the ZPL, revealing a reabsorption-corrected ZPL fraction of 16(1)%.
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Figure 4
Experimental setup. A laser, tuned to the ${Se}^{+} 1 s$ : $A \Rightarrow 2 p_{\pm}$ transition ( $4578 {cm}^{- 1}$ , or 2184 nm), whose wavelength is monitored with a pick-off beam routed into a wavemeter, is focused through a lens (L1) to minimize the beam waist within a 10-MHz-bandwidth germanium AOM. The first diffracted (modulated) beam is recollimated (L2) and passed through a 1-mm aperture, to reject the main beam and higher-order diffracted beams, and focused (L3) onto the $w^{nat} Si$ $:^{nat} Se$ : $HB$ sample held in superfluid helium. A portion of the resulting $1 s$ : $T_{2}$ : $Γ_{7} \Rightarrow 1 s$ : $A$ luminescence signal is captured by an elliptical mirror and sent through 2440- and 2850-nm long-pass filters (Filter 1 and Filter 2), to selectively pass $1 s$ : $T_{2}$ : $Γ_{7} \Rightarrow 1 s$ : $A$ light onto a MCT detector. A lock-in measurement was applied to the detected signal with the use of the AOM driving frequency as the reference.
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Figure 5
Excited-state-lifetime measurement of the $1 s$ : $T_{2}$ : $Γ_{7}$ state of ${Se}^{+}$ detected through modulation-frequency-dependent luminescence. Five separate datasets are plotted as open circles and their average is indicated by closed black circles. (a) Amplitude response of the photoluminescence as a function of excitation modulation frequency. The averaged amplitude data are fit with Eq. (4) (blue curve) and the data are normalized to the fit amplitude. (b) Phase response of the photoluminescence as a function of excitation modulation frequency. The phase lag between the AOM drive signal and the luminescence signal is fit with Eq. (5) (blue curve). Dashed red lines intersect the data at the critical modulation frequencies, at which the normalized fit amplitude has dropped to $1 / \sqrt{2}$ and phase has lagged by $45^{\circ}$ , revealing a $T_{1}$ time for the $1 s$ : $T_{2}$ : $Γ_{7}$ excited state of 7.7(4) ns.
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Figure 6
(a) Raman spectra of the ${Se}^{0}$ region showing features whose shifts in energy match the shifts in tunable laser energy (applied laser energy from bottom to top, 9246.49, 9249.89, and $9253.28 {cm}^{- 1}$ ). The left (right) peaks correspond to Raman scattering from the $1 s$ : $A \Leftrightarrow 1 s$ : $E$ ( $1 s$ : $A \Leftrightarrow 1 s$ $:^{1} T_{2}$ ) transition with an average measured offset of $2223.1 {cm}^{- 1}$ ( $2195.5 {cm}^{- 1}$ ) from the applied laser energy. A broad photoluminescence feature of unknown origin is labeled by an asterisk. The spectra are collected with a resolution of $0.5 {cm}^{- 1}$ with use of a liquid-nitrogen-cooled $Ge$ diode detector. The inset shows the offset due to $1 s$ : $A \Leftrightarrow 1 s$ $:^{1} T_{2}$ matches the observed energy of the $1 s$ : $A \Leftrightarrow 1 s$ $:^{1} T_{2}$ transition seen in absorption. (b) Raman spectra of the ${Se}^{+}$ donor region revealing no signs of $1 s$ : $E$ or any other Raman-shifted transitions. Photoluminescence lines corresponding to bound exciton features of unknown origin are marked with an asterisk. Expected Raman-feature positions are indicated with dashed lines under the assumption of the theoretically predicted binding energy of $1 s$ : $E$ [38] and the known transition energy of $1$ : $A \Leftrightarrow 1 s$ : $T_{2}$ : $Γ_{7}$ . The spectra are collected with a resolution of $1.0 {cm}^{- 1}$ with use of a liquid-nitrogen-cooled $In Sb$ detector with a cryogenically mounted band-pass filter.
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Physical Review Applied

Characterization of the Si:Se+ Spin-Photon Interface

Adam DeAbreu, Camille Bowness, Rohan J.S. Abraham, Alzbeta Medvedova, Kevin J. Morse, Helge Riemann, Nikolay V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael L.W. Thewalt, and Stephanie Simmons

Phys. Rev. Applied 11, 044036 – Published 11 April 2019

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Characterization of the $Si$ : ${Se}^{+}$ Spin-Photon Interface